UMH13N dual npn+pnp digital transistors (built-in resistors) elektronische bauelemente 1-nov-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features two dtc144t chips in a package. marking package information package mpq leader size sot-363 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma power dissipation p d 150 mw junction & storage temperature t j , t stg 150, -55 ~ 150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 50 - - v i c =50a, i e =0 collector-emitter breakdown voltage v (br)ceo 50 - - i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =50a, i c =0 collector cut-off current i cbo - - 0.5 a v cb =50v, i e =0 emitter cut-off current i ebo - - 0.5 a v eb =4v, i c =0 collector-emitter saturation voltage v ce(sat) - - 0.3 v i c =5ma, i b =0.5ma dc current transfer ratio h fe 100 - 600 v ce =5v, i c =1ma input resistance r 1 32.9 - 61.1 k transition frequency f t - 250 - mhz v ce =10v, i c =5ma, f=100mhz ref. millimeter ref. millimeter min. max. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 sot-363 h13 top view
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